Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
Identifieur interne : 00DC09 ( Main/Repository ); précédent : 00DC08; suivant : 00DC10Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
Auteurs : RBID : Pascal:02-0574702Descripteurs français
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- 7361E, 7321C, 7363H, 7350G, 8105E, 7220J, 7320A, Etude théorique, Simulation ordinateur, Indium composé, Gallium composé, Aluminium composé, Semiconducteur III-V, Semiconducteur bande interdite étroite, Superréseau semiconducteur, Effet Auger, Recombinaison électron trou, Etat interface, Structure bande, Calcul k.p.
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Abstract
A comparison is performed between measured and calculated Auger recombination rates for four different narrow-gap superlattices based on the InAs/GaSb/AlSb material system. The structures are designed for optical or electrical injection for mid-infrared laser applications, with wavelengths ranging from 3.4 to 4.1 μm. The electronic band structures are computed employing an accurate 14-band restricted basis set (superlattice Kp) methodology that utilizes experimental information about the low-energy electronic structure of the bulk constituents. The superlattice band structures and their associated matrix elements are directly employed to compute Auger recombination rates. Varying amounts of Auger recombination suppression are displayed by the various superlattices as compared to bulk mid-infrared systems. The greatest disagreement between theory and experiment is shown for the structure predicted to have the most Auger suppression, suggesting the suppression is sensitive either to theoretical or growth uncertainties. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Auger recombination in narrow-gap semiconductor superlattices incorporating antimony</title><author><name sortKey="Grein, C H" uniqKey="Grein C">C. H. Grein</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago, Illinois 60607-7059</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Optical Science and Technology Center and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Optical Science and Technology Center and Department of Electrical and Computer Engineering, University of Iowa, Iowa City</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Department of Physics and Astronomy, Optical Science and Technology Center, and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Optical Science and Technology Center, and Department of Electrical and Computer Engineering, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Flatte, M E" uniqKey="Flatte M">M. E. Flatte</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Olesberg, J T" uniqKey="Olesberg J">J. T. Olesberg</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Anson, S A" uniqKey="Anson S">S. A. Anson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago, Illinois 60607-7059</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago</wicri:cityArea></affiliation></author><author><name sortKey="Zhang, L" uniqKey="Zhang L">L. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago, Illinois 60607-7059</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago</wicri:cityArea></affiliation></author><author><name sortKey="Boggess, T F" uniqKey="Boggess T">T. F. Boggess</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago, Illinois 60607-7059</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0574702</idno><date when="2002-12-15">2002-12-15</date><idno type="stanalyst">PASCAL 02-0574702 AIP</idno><idno type="RBID">Pascal:02-0574702</idno><idno type="wicri:Area/Main/Corpus">00E336</idno><idno type="wicri:Area/Main/Repository">00DC09</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Auger effect</term><term>Band structure</term><term>Computerized simulation</term><term>Electron-hole recombination</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Narrow band gap semiconductors</term><term>Semiconductor superlattices</term><term>Theoretical study</term><term>k.p calculations</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7321C</term><term>7363H</term><term>7350G</term><term>8105E</term><term>7220J</term><term>7320A</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Indium composé</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite étroite</term><term>Superréseau semiconducteur</term><term>Effet Auger</term><term>Recombinaison électron trou</term><term>Etat interface</term><term>Structure bande</term><term>Calcul k.p</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A comparison is performed between measured and calculated Auger recombination rates for four different narrow-gap superlattices based on the InAs/GaSb/AlSb material system. The structures are designed for optical or electrical injection for mid-infrared laser applications, with wavelengths ranging from 3.4 to 4.1 μm. The electronic band structures are computed employing an accurate 14-band restricted basis set (superlattice Kp) methodology that utilizes experimental information about the low-energy electronic structure of the bulk constituents. The superlattice band structures and their associated matrix elements are directly employed to compute Auger recombination rates. Varying amounts of Auger recombination suppression are displayed by the various superlattices as compared to bulk mid-infrared systems. The greatest disagreement between theory and experiment is shown for the structure predicted to have the most Auger suppression, suggesting the suppression is sensitive either to theoretical or growth uncertainties. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>92</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Auger recombination in narrow-gap semiconductor superlattices incorporating antimony</s1></fA08><fA11 i1="01" i2="1"><s1>GREIN (C. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>FLATTE (M. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>OLESBERG (J. T.)</s1></fA11><fA11 i1="04" i2="1"><s1>ANSON (S. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHANG (L.)</s1></fA11><fA11 i1="06" i2="1"><s1>BOGGESS (T. F.)</s1></fA11><fA14 i1="01"><s1>Microphysics Laboratories and Department of Physics M/C 273, University of Illinois at Chicago, 845 West Taylor Street No. 2236, Chicago, Illinois 60607-7059</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Optical Science and Technology Center and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242</s1></fA14><fA14 i1="04"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1></fA14><fA14 i1="05"><s1>Department of Physics and Astronomy, Optical Science and Technology Center, and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242</s1></fA14><fA20><s1>7311-7316</s1></fA20><fA21><s1>2002-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0574702</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A comparison is performed between measured and calculated Auger recombination rates for four different narrow-gap superlattices based on the InAs/GaSb/AlSb material system. The structures are designed for optical or electrical injection for mid-infrared laser applications, with wavelengths ranging from 3.4 to 4.1 μm. The electronic band structures are computed employing an accurate 14-band restricted basis set (superlattice Kp) methodology that utilizes experimental information about the low-energy electronic structure of the bulk constituents. The superlattice band structures and their associated matrix elements are directly employed to compute Auger recombination rates. Varying amounts of Auger recombination suppression are displayed by the various superlattices as compared to bulk mid-infrared systems. 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